TSM1NB60

TSM1NB60 600V N-Channel Power MOSFET TO-251 (IPAK) TO-252 (DPAK) SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 600 RDS(on)(Ω) 10 @ VGS =10V ID (A) 0.5 General Description The TSM1NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● Low RDS(ON) 8Ω (Typ.) Low gate charge typical @ 6.1nC (Typ.) Low Crss typical @ 4.2pF (Typ.) Block Diagram Ordering Information Part No. TSM1NB60CH C5G TSM1NB60CP ROG Package TO-251 TO-252 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel N-Channel MOSFET TSM1NB60CW RPG SOT-223 Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature o Symbol VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS dv/dt PTOT TJ TSTG Limit IPAK DPAK 600 ±30 1 0.7 4 5 4.5 39 39 150 -55 to +150 2.1 SOT-223 Unit V V A A A mJ V/ns W ºC o C 1/8 Version: A12 TSM1NB60 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Th...