TSM35N10

TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V ID (A) 32 Features ● ● ● ● Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Symbol VDS VGS Limit 100 ±20 32 26 5 4 70 35 61 83.3 53.3 2 1.3 -55 to +150 -55 to +150 Unit V V Continuous Drain Current ID A Drain Current-Pulsed Note 1 Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH TC=25° C Maximum Power Dissipation TC=70° C TA=25° C TA=70° C IDM IAS, IAR EAS, EAR A A mJ PD W Storage Temperature Range Operating Junction Temperature Range * Limited by maximum junction temperature TSTG TJ ° C ° C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Symbol RӨJC RӨJA Limit 1.5 62 Unit o o C/W C/W 1/6 Version: B13 TSM35N10 100V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Dynamic Total Gat...