TSM4N80

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 3 @ VGS =10V ID (A) 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 3Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N80CZ C0 TSM4N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation Tc = 25 C Derate above 25℃ o Symbol VDS VGS Tc = 25 C Tc = 100 C o o TO-220 800 ±30 4 2.5 16 4.5 85 4 12.3 123 0.98 150 ITO-220 Unit V V ID IDM dv/dt EAS IAR EAR PD TJ TSTG 4* 2.5 * 16 * A A V mJ A mJ 38.7 0.3 -55 to +150 W ºC/W ºC o Operating Junction Temperature Storage Temperature Range * Limited by maximum junct...