Document
TSM4N90
900V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V) RDS(on)(Ω)
900 4 @ VGS =10V
ID (A)
4
General Description
The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Features
● ● ● Low RDS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM4N90CZ C0
Package
TO-220
Packing
50pcs / Tube
TSM4N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation Tc = 25 C Derate above 25℃
o
Symbol
VDS VGS Tc = 25 C Tc = 100 C
o o
TO-220
900 ±30 4 2.2 16 4.5 474 4 12.3 123 0.98 150
ITO-220
Unit
V V
ID IDM dv/dt EAS IAR EAR PD TJ TSTG
4* 2.2 * 16 *
A A V mJ A mJ
38.7 0.3 -55 to +150
W ºC/W ºC
o
Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature
C
1/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC RӨJA
TO-220
1.01 62.5
ITO-220
3.23
Unit
o
C/W
Electrical Specifications (Tc = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 2.0A VDS = VGS, ID = 250uA VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 30V, ID = 2.0A IS = 4A, VGS = 0V
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on)
Min
900 -2.0 ----------------
Typ
-3.2 ---6 -25 4.8 10.2 955 80 13 49 38 146 50 487
Max
-4.0 4.0 10 ±100 -1.5 -------------
Unit
V Ω V uA nA S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 720V, ID = 4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 4A, VGS = 10V, ID = 4A, VDD = 450V, RG = 25Ω
tr td(off) tf tfr
nS
nS uC
dIF/dt = 100A/us Reverse Recovery Charge Qfr -2.8 Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Max Rating EAS Test Condition: VDD = 50V, IAS=4A, L=56mH, RG=25Ω, Starting TJ=25℃ Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=4A, L=1mH, RG=25Ω, Starting TJ=25℃ 3. ISD ≤4A, di/dt ≤ 200A/uS, VDD ≤ BV, Starting TJ=25℃ 4. Pulse test: pulse width ≤300uS, duty cycle ≤2% 5. b For design reference only, not subject to production testing. 6. c Switching time is essentially independent of operating temperature.
2/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Drain Current vs. Case Temperature BVDSS vs. Junction Temperature
Maximum Safe Operating Area
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
4/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220)
5/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
6/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
7/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
8/10
Version: B13
TSM4N90
900V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y G WW F = Year Code = Halogen Free = .