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TSM4N90 Dataheets PDF



Part Number TSM4N90
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description N-Channel Power MOSFET
Datasheet TSM4N90 DatasheetTSM4N90 Datasheet (PDF)

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 4 @ VGS =10V ID (A) 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well sui.

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TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 4 @ VGS =10V ID (A) 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N90CZ C0 Package TO-220 Packing 50pcs / Tube TSM4N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation Tc = 25 C Derate above 25℃ o Symbol VDS VGS Tc = 25 C Tc = 100 C o o TO-220 900 ±30 4 2.2 16 4.5 474 4 12.3 123 0.98 150 ITO-220 Unit V V ID IDM dv/dt EAS IAR EAR PD TJ TSTG 4* 2.2 * 16 * A A V mJ A mJ 38.7 0.3 -55 to +150 W ºC/W ºC o Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature C 1/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Symbol RӨJC RӨJA TO-220 1.01 62.5 ITO-220 3.23 Unit o C/W Electrical Specifications (Tc = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 2.0A VDS = VGS, ID = 250uA VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V VDS = 30V, ID = 2.0A IS = 4A, VGS = 0V Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) Min 900 -2.0 ---------------- Typ -3.2 ---6 -25 4.8 10.2 955 80 13 49 38 146 50 487 Max -4.0 4.0 10 ±100 -1.5 ------------- Unit V Ω V uA nA S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 720V, ID = 4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 4A, VGS = 10V, ID = 4A, VDD = 450V, RG = 25Ω tr td(off) tf tfr nS nS uC dIF/dt = 100A/us Reverse Recovery Charge Qfr -2.8 Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Max Rating EAS Test Condition: VDD = 50V, IAS=4A, L=56mH, RG=25Ω, Starting TJ=25℃ Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=4A, L=1mH, RG=25Ω, Starting TJ=25℃ 3. ISD ≤4A, di/dt ≤ 200A/uS, VDD ≤ BV, Starting TJ=25℃ 4. Pulse test: pulse width ≤300uS, duty cycle ≤2% 5. b For design reference only, not subject to production testing. 6. c Switching time is essentially independent of operating temperature. 2/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) 4/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220) 5/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 6/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 7/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/10 Version: B13 TSM4N90 900V N-Channel Power MOSFET ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y G WW F = Year Code = Halogen Free = .


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