KN2907

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KN2907/A EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. ᴌLow Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. ᴌComplementary to the KN2222/2222A. K D E G N A ᴌLow Leakage Current H MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg -40 -5 -600 625 150 -55ᴕ150 RATING KN2907 KN2907A -60 -60 UNIT V V V mA mW ᴱ ᴱ L F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 1996. 1. 28 Revision No : 0 1/3 KN2907/A ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current KN2907 KN2907A SYMBOL ICEX ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) TEST CONDITION VCE=-30V, VEB=-0.5V VCB=-50V, IE=0 IC=-10Ọ A, IE=0 IC=-10mA, IB=0 IE=-10Ọ A, IC=0 IC=-0.1mA, VCE=-10V MIN. -60 -40 -60 -5 35 75 50 100 75 100 100 30 50 200 TYP. MAX. -50 -20 -10 300 -0.4 -1.6 -1.3 -2.6 8 V UNIT nA nA V V V Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * KN2907 KN2907A Emitter-Base Breakdown Voltage KN2907 KN2907A KN2907 KN2907A DC Current Gain KN2907 KN2907A KN2907 KN2907A KN2907...