2N7002P

2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ AEC-Q101 qualified „ Logic-level compatible „ Trench MOSFET technology „ Very fast switching 1.3 Applications „ High-speed line driver „ Low-side loadswitch „ Relay driver „ Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 500 mA; Tj = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.01 [1] Conditions Tamb = 25 °C Min -20 - Typ 1 Max Unit 60 20 360 1.6 V V mA Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors 2N7002P 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 mbb076 Simplified outline 3 Graphic symbol D G SOT23 (TO-236AB) S 3. Ordering information Table 3. Ordering information Package Name 2N7002P TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. 2N7002P [1] Marking codes Marking code[1] LW% Type number % = -: made in Hon...