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MBR20100CT

Fairchild Semiconductor

Dual High Voltage Schottky Rectifier

MBR20100CT — Dual High Voltage Schottky Rectifier October 2010 MBR20100CT Dual High Voltage Schottky Rectifier Feature...


Fairchild Semiconductor

MBR20100CT

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MBR20100CT — Dual High Voltage Schottky Rectifier October 2010 MBR20100CT Dual High Voltage Schottky Rectifier Features Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability Rohs Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C + PIN1 PIN3 _ PIN2 TO-220 1 Mark : MBR20100CT Absolute Maximum Ratings* Symbol VRRM VR IF(AV) IFSM TSTG Ta = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current, Tc= 120°C Peak Forward Surge Current, 8.3mS Half Sine wave Storage Temperature Range Value 100 100 10 (Per Leg) 20 (Per Device) 150 -55 to 150 Unit V V A A °C Operating Junction Temperature 150 °C TJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ta = 25°C unless otherwise noted Thermal Characteristics* Symbol RθJC RθJA * JESD51-10 Parameter Thermal Resistance, Junction to Case per Leg Thermal Resistance, Junction to Ambient per Leg Max. 1.5 62.5 Unit °C/W °C/W Electrical Characteristics* Symbol IR Ta = 25°C unless otherwise noted Parameter Reverse Current Test Condition VR = 100V VR = 100V IF = 10A IF = 10A IF = 20A IF = 20A Tc = 25 °C Tc = 125 °C Tc = 25 °C Tc = 125 °C Tc = 25 °C Tc = 125 °C Min. Max. 0.2 5 0.8 0.7 0.9 0.8 Unit mA VF Forward Voltage V * DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2% © ...




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