EB102DL

SY semiconductors ● RoHS FEATURES ▲HIGH Shenzhen SY Semiconductors Co.，LTD. EB102DL CAPABILTY VOLTAGE ▲HIGH SPEED SWITCHING ● 、 、 ▲WIDE SOA ▲RoHS COMPL APPLICATION ▲FLUORESCENT LAMP ▲ELECTRONIC TRANSFORMER ▲ELECTONIC TRANSFORMER ▲SWICH MODE POWER SUPPLY SYMBO L VCBO V CEO V EBO IC P DTOT TJ T STG UNIT ● Absolute Maximum Ratings (Tc=25℃) PARAMETER - Collector–Base Voltage - Collector–Emitter Voltage - Emitter-Base Voltage Collector Current Total Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 400 200 9 1.5 11 150 -65-150 V V A W ℃ ℃ ● Electronic Characteristics (Tc=25℃) CHARACTERISTICS - Collector–Base C utoff Current - Collector-Emitter C utoff Current - Emitter- Base Cutoff Current - Collector- Base Voltage - Collector–Emitter Voltage - Emitter-Base Voltage. - Collector–Emitter Saturation Voltage - Base–Emitter Saturation Voltage DC Current Gain Storage Time SYMBOL ICBO I CEO I EBO BVCBO BV CEO BV EBO TEST CONDITION VCB=400V IE=0 V CE =200V I B =0 V EB =9V，I C =0 I C =1mA，I B =0 I C =10mA，I E =0 I C =1mA，I C =0 IC=1A Ib=0.5A Vcesat IC=0.5A Ib=0.1A Vbesat IC=1A Ib=0.5A IC=0.1A VCE=5V HFE IC=1mA VCE=5V Ts IC=0.25A（UI9600） 7 1.5 3.5 us 10 0.5 1.5 40 V V 400 200 9 1.5 MIN MAX 100 100 100 UNIT µA uA uA V V V V SY semiconductors 1/4 SY semiconductors Shenzhen SY Semiconductors Co.，LTD. EB102DL 10-15 1.5-2.0 15-20 2.0-2.5 20-25 2.5-3.0 25-30 3.0-3.5 ● Ts CLASSIFICATION OF HFE AND TS HFE TS ●The name and content ...