EB102

Shenzhen SYS Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY FLUORESCENT LAMP HIGH SPEED SWITCHING ELECTRONIC BALLAST WIDE SOA EB102 Absolute Maximum Ratings PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tc=25°C SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 600 400 9 0.4 8 150 -65-150 UNIT V V V A W °C °C B C E TO-92 Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter- Base Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Tc=25°C SYMBOL ICBO ICEO VCEO VEBO Vcesat Vbesat TEST CONDITION VCB=600V VCE=400V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=0.1A,IB=10mA IC=0.4A,IB=0.1A IC=0.1A,IB=10mA VCE=5V,IC=1mA 7 10 5 1.0 3.0 µS 0.9 40 400 9 0.5 0.7 1.0 MIN MAX 100 250 UNIT A A V V V V DC Current Gain hFE VCE=10V,IC=50mA Vce=5V,Ic=0.4A Storage Time Falling Time ts tf VCC=5V, IC=0.1A, (UI9600) SYS semiconductors 2005.12 1 Shenzhen SYS Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS SOA (DC) 120 100 80 IS/B EB102 % 1 Ic(A) Pc Tj 0.1 60 40 20 Ptot 0.01 1 hFE 0 10 100 Vce(V) 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj=− 40 10 Tj=− 40 Vce=1.5V Vce=5V 1 0.001 0.01 0.1 Ic(A) 1 1 0.001 0.01...