FCB36N60N

FCB36N60N N-Channel MOSFET March 2013 FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ Features RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A Ultra low gate charge (Typ. Qg = 86 nC) Low effective output capacitance (Typ. Coss.eff = 361 pF) 100% avalanche tested RoHS compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications Solar Inverter AC-DC Power Supply D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 3) -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) FCB36N60N 600 ±30 36 22.7 108 1800 12 3.12 100 20 312 2.6 -55 to +150 300 Unit V V A A mJ A mJ V/ns V/ns W W/oC o o Operating and Storage Temp...