K2741

2SK2741 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2741 Chopper Regulator, DC−DC Converter and Motor Drive Applications l 4 V gate drive l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.12 Ω (typ.) : |Yfs| = 5.0 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 60 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 5 20 2.5 129 5 0.25 150 −55~150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) (Note 2) JEDEC JEITA TOSHIBA ― ― 2-7H1B Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range Weight: 0.12 g (typ.) Marking Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 50 Unit °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C (initial), L = 7 mH, RG = 25 Ω, IAR = 5 A Note 4: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-01-25 2SK2741 Electrical Characteristi...