High-Voltage Fast-Switching NPN Power Transistor
• High-Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switched Mode Power Supply
1.Base 2.Collector 3.Emitter
1. The Affix “-H2” means the hFE classification.
The Suffix “-TU” means the tube packing method.
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Collector Current (DC)
Collector Current (Pulse)
Total Device Dissipation (TC = 25°C)
Storage Temperature Range
-65 to +150
2. These ratings are based on a maximum junction temperature of 150°C.
These are steady state limits. The factory should be consulted on application involving pulsed or low duty cycle
© 2003 Fairchild Semiconductor Corporation