MJE13009

MJE13009 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features http://onsemi.com VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 700 V Blocking Capability SOA and Switching Applications Information Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Emitter Current − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD TJ, Tstg Value 400 700 9 12 24 6 12 18 36 2 16 100 800 −65 to +150 Unit Vdc Vdc Vdc Adc Adc Adc 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS 100_C is 120 ns (Typ) 1 2 TO−220AB CASE 221A−09 STYLE 1 3 MARKING DIAGRAM MJE13009G W W/_C W W/_C _C A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package AY WW Total Device Dissipation @ TC = 25_C Derate above 25°C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−...