MJE13009
Preferred Device
SWITCHMODEt Series NPN Silicon Power Transistors
The MJE13009 is designed for high−voltage, h...
MJE13009
Preferred Device
SWITCHMODEt Series
NPN Silicon Power
Transistors
The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching
Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
Features http://onsemi.com
VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive Loads @ TC = 100_C Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A, 700 V Blocking Capability SOA and Switching Applications Information Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Emitter Current − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) Symbol VCEO(sus) VCEV VEBO IC ICM IB IBM IE IEM PD PD TJ, Tstg Value 400 700 9 12 24 6 12 18 36 2 16 100 800 −65 to +150 Unit Vdc Vdc Vdc Adc Adc Adc
12 AMPERE
NPN SILICON POWER
TRANSISTOR 400 VOLTS − 100 WATTS
100_C is 120 ns (Typ)
1
2
TO−220AB CASE 221A−09 STYLE 1 3
MARKING DIAGRAM
MJE13009G W W/_C W W/_C _C A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package AY WW
Total Device Dissipation @ TC = 25_C Derate above 25°C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction−...