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GW45HF60WD Dataheets PDF



Part Number GW45HF60WD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description STGW45HF60WD
Datasheet GW45HF60WD DatasheetGW45HF60WD Datasheet (PDF)

STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ Welding High frequency converters Power factor correction TO-247 1 Description The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. Suffix "W" denotes a subset of .

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STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features ■ ■ ■ Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Ultra fast soft recovery antiparallel diode 3 Applications 2 ■ ■ ■ Welding High frequency converters Power factor correction TO-247 1 Description The "HF" series is based on a new planar technology concept to yield an IGBT with tighter variation of switching energy (Eoff) versus temperature. Suffix "W" denotes a subset of products tailored to high switching frequency operation over 100 kHz. Figure 1. Internal schematic diagram Table 1. Device summary Marking GW45HF60WD Package TO-247 Packaging Tube Order code STGW45HF60WD August 2009 Doc ID 15593 Rev 2 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STGW45HF60WD 1 Electrical ratings Table 2. Symbol VCES IC IC (1) (1) Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 °C Continuous collector current at TC = 100 °C Collector current (pulsed) Turn-off latching current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge not repetitive forward current tp= 10 ms sinusoidal Total dissipation at TC = 25 °C Storage temperature – 55 to 150 Operating junction temperature °C Value 600 70 45 TBD TBD ± 20 30 120 250 Unit V A A A A V A A W ICP(2) ICL (3) VGE IF IFSM PTOT Tstg Tj 1. Calculated according to the iterative formula: T j ( max ) – T C I C ( T C ) = --------------------------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( max ) ( T j ( max ), I C ( T C ) ) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA 3. VCLAMP = 80% (VCES), VGE = 15 V, RG = 10 Ω, TJ = 150 °C Table 3. Symbol Rthj-case Rthj-amb Thermal data Parameter Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient Value 0.5 1.5 50 Unit °C/W °C/W °C/W 2/9 Doc ID 15593 Rev 2 STGW45HF60WD Electrical characteristics 2 Electrical characteristics (TJ = 25 °C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Min. Typ. Max. Unit Collector-emitter V(BR)CES breakdown voltage (VGE = 0) VCE(sat) VGE(th) ICES IGES gfs IC = 1 mA 600 1.9 TBD 3.75 2.5 5.75 500 5 ± 100 TBD V V V V µA mA nA S Collector-emitter saturation VGE = 15 V, IC= 30 A voltage VGE = 15V, IC = 30 A,TJ= 125 °C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE = VGE, IC = 1 mA VCE = 600 V VCE = 600 V, TJ = 125 °C VGE = ±20 V VCE = 15 V, IC = 30 A Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. Max. Unit TBD TBD TBD TBD TBD TBD pF pF pF nC nC nC VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 390 V, IC = 30 A, VGE = 15 V, Figure 3 - - - - Doc ID 15593 Rev 2 3/9 Electrical characteristics STGW45HF60WD Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390 V, IC = 30 A , VGE = 15 V, RG = 4.7 Ω Figure 2 VCC = 390 V, IC = 30 A , VGE = 15 V, RG = 4.7 Ω TJ = 125 °C Figure 2 VCC = 390 V, IC = 30 A, , VGE = 15 V RGE = 4.7 Ω Figure 2 VCC = 390 V, IC = 30 A, , VGE =15 V, RGE = 4.7 Ω TJ = 125 °C Figure 2 Min. Typ. TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Unit ns ns A/µs ns ns A/µs ns ns ns ns ns ns - - - - - - - - Table 7. Symbol Eon(1) Eoff Ets Eon(1) Eoff Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390 V, IC = 30 A , VGE = 15 V, RG = 4.7 Ω Figure 4 VCC = 390 V, IC = 30 A , VGE = 15 V, RG = 4.7 Ω TJ = 125 °C Figure 4 Min. Typ. 300 330 630 550 550 1100 800 Max. Unit µJ µJ µJ µJ µJ µJ - - 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 4. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 °C and 125 °C). Eon include diode recovery energy. Table 8. Symbol VF trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test co.


MAX44268 GW45HF60WD TAD100US12


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