FSP8N60

FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings Symbol VDSS ID Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) PD Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) 155 1.21 (Note 1) 7.5 4.5 30 ±30 285 15.5 4.5 55 0.4 -55 ~ 150 300 Parameter FSP8N60 FS8N60 600 7.5 4.5* 30 Units V A A A V mJ mJ V/ns W W/ °C °C °C IDM VGS EAS EAR dv/dt TSTG, TJ TL Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ Thermal Resistance, Junction-to-Ambient FSP8N60 0.85 0.5 62.5 FS8N60 2.2 ___ 62.5 ...