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IRGBC20KD2 Dataheets PDF



Part Number IRGBC20KD2
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGBC20KD2 DatasheetIRGBC20KD2 Datasheet (PDF)

PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.5V G @VGE = 15V, IC = 6.0A E n-channel Description Co-packaged IGBTs are a natural extension of .

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PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.5V G @VGE = 15V, IC = 6.0A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. TO-220AB Max. 600 10 6.0 20 20 7.0 20 10 ± 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. — — — — — Typ. — — 0.50 — 2 (0.07) Max. 2.1 3.5 — 80 — Units °C/W g (oz) Revision 2 C-897 IRGBC20KD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.37 — V/°C VGE = 0V, IC = 1.0mA — 2.4 3.5 IC = 6.0A V GE = 15V — 3.6 — V IC = 10A See Fig. 2, 5 — 2.8 — IC = 6.0A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 1.9 3.3 — S VCE = 100V, I C = 6.0A — — 250 µA VGE = 0V, V CE = 600V — — 1700 VGE = 0V, V CE = 600V, T J = 150°C — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.4 1.7 IC = 8.0A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes:.


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