IRGB4086PbF

PD - 96222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package IRGB4086PbF IRGS4086PbF Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C TJ max c 300 1.90 250 150 V V A °C C G E G C E G C E n-channel G G ate TO-220AB D2 Pak IRGB4086PbF IRGS4086PbF C C ollector E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. ±30 70 40 250 160 63 1.3 -40 to + 150 300 10lb in (1.1N m) Units V A c W W/°C °C x x ...