R5007ANX

10V Drive Nch MOSFET R5007ANX Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3) 2.54 0.75 2.6 Packaging specifications Package Code Type Basic ordering unit (pieces) Bulk − 500 Inner circuit R5007ANX ∗1 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 500 ±30 ±7 ±28 7 28 3.5 3.2 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C (1) (1) Gate (2) Drain (3) Source (2) (3) ∗1 Body Diode Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 3.13 Unit °C/W www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.01 - Rev.B R5007ANX Electrical characteristics (Ta=25C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current ...