DatasheetsPDF.com

FLM2023L-30F

SUMITOMO

L-Band Internally Matched FET

FLM2023L-30F L-Band Internally Matched FET FEATURES • High Output Power: P1dB=45.0dBm(Typ.) • High Gain: G1dB=13.0dB(Typ...


SUMITOMO

FLM2023L-30F

File Download Download FLM2023L-30F Datasheet


Description
FLM2023L-30F L-Band Internally Matched FET FEATURES High Output Power: P1dB=45.0dBm(Typ.) High Gain: G1dB=13.0dB(Typ.) High PAE: hadd=43%(Typ.) Broad Band: 2.025 to 2.285GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM2023L-30F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 107 -65 to +175 175 Limit <= 10 <= 54 >=-17.2 Limit Typ. 6000 -2.0 45.0 13.0 7.0 43 Unit V V W deg.C deg.C Unit V mA mA RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=25ohm Reverse Gate Current IGR RG=25ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1dB G1dB Idsr hadd DG IM3 Rth DTch Condition VDS=5V, V GS=0V VDS=5V, IDS=7.2A VDS=5V, IDS=720mA IGS=-720uA VDS=10V IDSDC=7.0A f=2.025 to 2.285 GHz Zs =ZL=50ohm f=2.285 GHz Df=5MHz, 2-Tone Test Pout=34.5dBm (S.C.L.) Channel to Cas...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)