FLM2527L-20F

FLM2527L-20F L-Band Internally Matched FET FEATURES High Output Power: P1dB = 43.0dBm (Typ.) High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 to 2.7GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM2527L-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. This product is uniquely suited for use in MMDS base station amplifiers applications. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.C Storage Temperature Tstg Channel Temperature Tch SEDI recommends the follow ing conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (V DS ) should not exceed 10 volts. Rating 15 -5 83.3 -65 to +175 175 Unit V V W deg.C deg.C 2. The forw ard and reverse gate currents should not exceed 26.0 and -11.6 mA respectively w ith gate resistance of 25ohm ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25deg.C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise CASE STYLE ESD RoHS Compliance Note...