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2SA608-E Dataheets PDF



Part Number 2SA608-E
Manufacturers Secos
Logo Secos
Description PNP Plastic Encapsulated Transistor
Datasheet 2SA608-E Datasheet2SA608-E Datasheet (PDF)

2SA608 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -0.1 A, -40 V PNP Plastic Encapsulated Transistor FEATURES  TO-92  Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. G H CLASSIFICATION OF hFE Product-Rank 2SA608-D Range 60~120 2SA608-E 100~200 2SA608-F 160~320 2SA608-G 280~560 K A J D B Emitter Collector Base REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.7.

  2SA608-E   2SA608-E



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2SA608 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -0.1 A, -40 V PNP Plastic Encapsulated Transistor FEATURES  TO-92  Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. G H CLASSIFICATION OF hFE Product-Rank 2SA608-D Range 60~120 2SA608-E 100~200 2SA608-F 160~320 2SA608-G 280~560 K A J D B Emitter Collector Base REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating -40 -30 -5 -0.1 400 150, -55~150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Min -40 -30 -5 60 - Typ 180 7 Max -1 -1 560 -0.5 - Unit V V V μA μA V MHz pF Test condition IC= -100μA, IE=0 IC= -1mA, IB=0 IE= -100μA, IC=0 VCB= -25V, IE=0 VEB= -4V, IC=0 VCE= -6V, IC= -1mA IC= -50mA, IB= -5mA VCE= -6V, IC= -10mA VCB= -6V, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Jan-2011 Rev. A Page 1 of 3 2SA608 Elektronische Bauelemente -0.1 A, -40 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Jan-2011 Rev. A Page 2 of 3 2SA608 Elektronische Bauelemente -0.1 A, -40 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Jan-2011 Rev. A Page 3 of 3 .


2SA608-D 2SA608-E 2SA608-F


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