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2SD1012 Dataheets PDF



Part Number 2SD1012
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet 2SD1012 Datasheet2SD1012 Datasheet (PDF)

Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 20 15 5 0.7 1.5 250 125 --55 to +125 Unit V V V A A mW °C °C http://onsemi.com Stresses exceeding M.

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Ordering number : EN0676F 2SD1012 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 20 15 5 0.7 1.5 250 125 --55 to +125 Unit V V V A A mW °C °C http://onsemi.com Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7524-004 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC Product & Package Information • Package : SPA • JEITA, JEDEC : SC-72 • Minimum Packing Quantity : 2,500 pcs./box, 500pcs./bag 2.2 4.0 Marking D1012 Rank LOT No. Electrical Connection 2 0.4 0.5 0.6 1.8 3.0 3 15.0 0.4 0.4 1 1 1.3 0.7 2 3 1.3 0.7 1 : Emitter 2 : Collector 3 : Base SPA 3.0 3.8 Semiconductor Components Industries, LLC, 2013 September, 2013 O2412 TKIM/91003TN (KT)/91098HA (KT)/1115MY/1283KI, TS No.0676-1/10 2SD1012 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA VCE=2V, IC=500mA Pulse VCE=10V, IC=50mA VCB=10V, f=1MHz IC=5mA, IB=0.5mA IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A 20 15 5 160* 80 250 8 10 30 0.8 25 80 1.2 MHz pF mV mV V V V V Conditions Ratings min typ max 1.0 1.0 960* Unit μA μA * : The 2SD1012 is classified by 50mA hFE as follows : Rank hFE F 160 to 320 G 280 to 560 H 480 to 960 Ordering Information Device 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC Package SPA SPA-WA SPA SPA-WA Shipping 500pcs./bag 2,500pcs./box 500pcs./bag 2,500pcs./box Pb Free memo No.0676-2/10 2SD1012 800 IC -- VCE 50m A 100 IB -- VBE VCE=5V 700 10 mA Collector Current, IC -- mA 4mA 500 400 300 200 100 0 Base Current, IB -- μA IB=0mA 600 6m A 80 60 2mA 1mA 40 20 0 0.1 0.2 0.3 0.4 0.5 ITR08384 0 0 0.2 0.4 0.6 0.8 1.0 ITR08385 Collector-to-Emitter Voltage, VCE -- V 1000 f T -- IC Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Gain-Bandwidth Product, f T -- MHz 7 5 VCE=10V VCE=2V 2 DC Current Gain, hFE 2 3 5 7 2 3 5 7 3 3 2 100 7 5 3 2 10 1.0 100 7 5 3 2 10 1.0 10 Collector Current, IC -- mA 5 100 ITR08386 2 3 5 10 2 3 5 100 2 3 5 1000 2 3 5 Co.


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