Document
Ordering number : EN0676F
2SD1012
Bipolar Transistor
15V, 0.7A, Low VCE(sat), NPN Single SPA
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 20 15 5 0.7 1.5 250 125 --55 to +125 Unit V V V A A mW °C °C
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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ) 7524-004 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC
Product & Package Information
• Package : SPA • JEITA, JEDEC : SC-72 • Minimum Packing Quantity : 2,500 pcs./box, 500pcs./bag
2.2
4.0
Marking
D1012
Rank LOT No.
Electrical Connection
2
0.4 0.5 0.6
1.8 3.0
3
15.0 0.4
0.4
1
1 1.3 0.7
2
3 1.3 0.7
1 : Emitter 2 : Collector 3 : Base SPA
3.0 3.8
Semiconductor Components Industries, LLC, 2013 September, 2013
O2412 TKIM/91003TN (KT)/91098HA (KT)/1115MY/1283KI, TS No.0676-1/10
2SD1012
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=15V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA VCE=2V, IC=500mA Pulse VCE=10V, IC=50mA VCB=10V, f=1MHz IC=5mA, IB=0.5mA IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A 20 15 5 160* 80 250 8 10 30 0.8 25 80 1.2 MHz pF mV mV V V V V Conditions Ratings min typ max 1.0 1.0 960* Unit μA μA
* : The 2SD1012 is classified by 50mA hFE as follows : Rank hFE F 160 to 320 G 280 to 560 H 480 to 960
Ordering Information
Device 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC Package SPA SPA-WA SPA SPA-WA Shipping 500pcs./bag 2,500pcs./box 500pcs./bag 2,500pcs./box Pb Free memo
No.0676-2/10
2SD1012
800
IC -- VCE
50m A
100
IB -- VBE
VCE=5V
700
10 mA
Collector Current, IC -- mA
4mA
500 400 300 200 100 0
Base Current, IB -- μA IB=0mA
600
6m
A
80
60
2mA
1mA
40
20
0
0.1
0.2
0.3
0.4
0.5 ITR08384
0
0
0.2
0.4
0.6
0.8
1.0 ITR08385
Collector-to-Emitter Voltage, VCE -- V
1000
f T -- IC
Base-to-Emitter Voltage, VBE -- V
1000 7 5
hFE -- IC
Gain-Bandwidth Product, f T -- MHz
7 5
VCE=10V
VCE=2V
2
DC Current Gain, hFE
2 3 5 7 2 3 5 7
3
3 2 100 7 5 3 2 10 1.0
100 7 5 3 2 10 1.0
10
Collector Current, IC -- mA
5
100 ITR08386
2 3
5
10
2 3
5
100
2 3
5
1000
2 3
5
Co.