FLM5359-35F

FLM5359-35F C-Band Internally Matched FET FEATURES High Output Power: P1dB=45.5dBm(Typ.) High Gain: G1dB=9.0dB(Typ.) High PAE: hadd=35%(Typ.) Broad Band: 5.3 to 5.9GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The FLM5359-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115.4 -65 to +175 175 Limit <= 10 <= 107.2 >=-23.2 Unit V V W deg.C deg.C Unit V mA mA RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=13ohm Reverse Gate Current IGR RG=13ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1dB G1dB Idsr hadd DG Rth DTch Min. VDS=5V, V GS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA -1.0 IGS=-960uA -5.0 45.0 VDS=10V 8.0 f=5.3 to 5.9 GHz IDS=0.5 Idss (Typ.) Zs =ZL=50ohm Channel to Case 10V x Idsr x Rth G.C.P.:Gain Compression Point, IK Test Conditions Limit Unit Typ. Max. 16.0 24.0 A 8000 mS -2.0 ...