MMBTA64LT1G

MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon Features http://onsemi.com  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Compliant*  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCES VCBO VEBO IC Value −30 −30 −10 −500 Unit Vdc Vdc Vdc mAdc SOT−23 (TO−236) CASE 318 STYLE 6 COLLECTOR 3 BASE 1 EMITTER 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/C C/W 1 2x = Device Code x = U for MMBTA63LT1G x = V for MMBTA64LT1G SMMBTA64LT1G = Date Code* = Pb−Free Package 2x M G G RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/C C/W C M G (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended...