ELM5964-10F

ELM5964-10F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: hadd=39%(Typ.) ・Broad Band: 5.9～6.4GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION The ELM5964-10F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50W system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.8 -55 to +125 175 Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR Condition RG=50 ohm RG=50 ohm Lim it ≦10 ≦27.0 ≧-5.8 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IK Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr Nadd DG IM3 Rth DTch Condition V DS=5V , V GS=0V V DS=5V , IDS=2.4A V DS=5V , IDS=240mA IGS=-240uA V DS=10V f= 5.9 ~ 6.4 GHz IDSDC=2.6A (typ.) Zs=Z L=50 ohm f=6.4 GHz Df=10MHz ，2-tone Test Pout=29dBm (S.C.L.) Channel to Case 10V x Idsr X Rth S.C.L. : Sing...