DatasheetsPDF.com

FLM5972-4F Dataheets PDF



Part Number FLM5972-4F
Manufacturers SUMITOMO
Logo SUMITOMO
Description C-Band Internally Matched FET
Datasheet FLM5972-4F DatasheetFLM5972-4F Datasheet (PDF)

FLM5972-4F FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM5972-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the .

  FLM5972-4F   FLM5972-4F


Document
FLM5972-4F FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM5972-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 7.2 GHz, ∆f = 10 MHz 2-Tone Test Pout = 25.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65IDSS (Typ.), f = 5.9 ~ 7.2 GHz, ZS=ZL=50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 1100mA VDS = 5V, IDS = 85mA IGS = -85µA Min. -0.5 -5.0 35.5 8.5 -42 Limit Typ. Max. 1700 2600 1700 -1.5 36.5 9.5 36 -45 5.0 -3.0 ±0.8 6.0 80 Unit mA mS V V dBm dB mA % dB dBc °C/W °C 1100 1300 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level FLM5972-4F C-Band Internally Matched FET POWER DERATING CURVE 30 Total Power Dissipation (W) 33 OUTPUT POWER & IM3 vs. INPUT POWER VDS=10V f1 = 7.2GHz f2 = 7.21 GHz 2-tone test Pout Output Power (S.C.L.) (dBm) 24 18 12 6 31 29 27 IM3 -10 25 23 21 -30 -40 -50 0 50 100 150 200 12 14 16 18 20 22 24 Case Temperature (°C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY 38 OUTPUT POWER vs. INPUT POWER VDS=10V f = 6.55 GHz Pout VDS=10V P1dB Pin=27dBm 25dBm 38 Output Power (dBm) Output Power (dBm) 37 36 35 36 34 32 30 28 ηadd 60 45 30 15 23dBm 33 21dBm 32 31 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 16 18 20 22 24 26 28 Frequency (GHz) Input Power (dBm) ηadd (%) 34 IM3 (dBc) -20 FLM5972-4F C-Band Internally Matched FET +j50 +j25 6.6 6.8 S11 S22 +j100 +90° S21 S12 5.7GHz +j10 6.2 6.4 7.0 6.8 6.6 6.4 7.4 6.2 5.8 5.7GHz 6.0 5.8 5.7GHz 7.0 50Ω 7.2 7.4 7.2 250 +j250 7.4 5.7GHz 5.8 6.0 6.2 6.4 6.8 6.6 7.2 7.0 1 2 5.8 6.0 0 25 180° 7.4 7.2 7.0 3 4 0° SCALE FOR |S21| 6.2 6.0 SCALE FOR |S12| -j10 -j250 0.1 6.4 -j25 -j50 6.6 -j100 6.8 0.2 -90° FREQUENCY (MHZ) 5700 5800 5900 6000 6100 6200 6300 6400 6500 6600 6700 6800 6900 7000 7100 7200 7300 7400 S11 MAG .648 .637 .625 .614 .600 .587 .572 .558 .543 .530 .518 .506 .495 .485 .478 .467 .458 .453 ANG -118.1 -130.5 -143.4 -157.3 -172.2 172.1 155.4 137.6 119.4 100.7 82.1 64.2 46.6 30.1 19.6 3.2 -13.4 -30.9 S-PARAMETERS VDS = 10V, IDS = 1100mA S21 S12 MAG ANG MAG ANG 3.136 3.237 3.362 3.490 3.617 3.746 3.847 3.939 3.992 4.011 3.980 3.914 3.828 3.735 3.672 3.586 3.507 3.436 55.3 43.8 32.1 19.7 6.8 -6.1 -20.0 -34.3 -48.8 -63.6 -78.4 -92.9 -107.2 -121.3 -129.7 -143.5 -157.4 -171.7 .038 .032 .029 .028 .027 .031 .037 .046 .052 .062 .069 .074 .080 .084 .087 .090 .091 .092 117.9 98.9 76.0 46.5 15.1 -11.3 -36.3 -58.4 -76.8 -92.8 -108.7 -123.5 -137.5 -150.1 -157.0 -171.1 175.6 163.5 S22 MAG .634 .614 .601 .585 .557 .526 .482 .438 .396 .350 .306 .274 .253 .231 .223 .204 .181 .156 ANG -74.1 -83.1 -93.0 -103.1 -113.7 -125.2 -138.4 -152.9 -168.3 175.1 156.9 136.2 114.7 95.0 81.0 61.9 41.4 18.7 FLM5972-4F C-Band Internally Matched FET Case Style "IB" Metal-Ceramic Hermetic Package 2.0 Min. (0.079) 2-R 1.6±0.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.6±0.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.9±0.2 (0.508) 12.0 (0.422) 17.0±0.15 (0.669) 21.0±0.15 (0.827) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-p.


SLM5868-25F FLM5972-4F FLM5972-8F


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)