ELM7179-10F

ELM7179-10F C-band Internally Matched FET FEATURES ・High Output Power ： P1dB=40.5dBm(typ.) ・High Gain ： G1dB=9.0dB(typ.) ・High P.A.E. ： ηadd=38%(typ.) ・Broad Band ： 7.1 - 7.9GHｚ ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The ELM7179-10F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Symbol Drain-Source Voltage VDS Gata-Source Voltage VGS Total Power Dissipation PT Storage Temperature TSTG Channel Temperature TCH RECOMMENDED OPERATING CONDITIONS Item Symbol DC input Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Storage Temperature TSTG Channel Temperature TCH Rating 15 -5 42.8 -65 to +175 + 175 Unit V V W deg-C deg-C Condition RG=51Ω RG=51Ω Recommend < 10 < +27.0 < -5.8 -55 to +125 + 155 Unit V mA mA deg-C deg-C RECOMMENDED OPERATING CONDITIONS ( Case Temperature Tc=25 deg-C ) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm VP VGSO ｆ P1dB G1dB Idsr ηadd dG IM3 Rth dTch Test Conditions VDS=5V, V GS=0V VDS=5V, IDS=2400mA VDS=5V, IDS=240mA IGS=-240uA VDS=10V IDS(DC)=2600mA(typ.) Zs=Zl=50Ω Min. － － -0.5 -5 7.1 39.5 8.0 － － － Limits Typ. 4000 4000 -1.5 － － 40.5 9.0 2600 38 － -46 3.0 － Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Curr...