C-Band Internally Matched FET
FLM7785-4F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB...
Description
FLM7785-4F
C-Band Internally Matched FET FEATURES
High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM7785-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25.0 -65 to +175 175 Unit V V W °C °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 8.5 GHz, ∆f = 10 MHz 2-...
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