FLM7785-8F
C-Band Internally Matched FET FEATURES
High Output Power: P1dB = 39.5dBm (Typ.) High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM7785-8F is a power GaAs FET that is internally matched for standard ...
