C-Band Internally Matched FET
FLM7785-45F
C-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・...
Description
FLM7785-45F
C-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=32.5%(Typ.) ・Broad Band: 7.7~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM7785-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 115 -65 to +175 175 Unit V V W
O
C C
O
RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25OC)
Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=10Ω RG=10Ω Condition Limit Unit V mA mA
≤10 ≤52 ≥-23.2
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC)
Item Drain Current Transconductance Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G Rth ∆Tch
Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA IGS=-960uA VDS=10V f=7.7 - 8.5 GHz IDS(DC)=8.0A(typ.) Zs=ZL=50Ω
Min. -0.5 -5.0 46.0 6.0 -
Limit Typ. 24 16 -1.5 46.5 7.0 11 32.5 1.1 -
Max. -3.0 13 1.6 1.3 100
Unit A S V V dBm dB A % dB
O
Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise
Channel to Case 10V x Ids(DC) x Rth
C/W
O
C
CASE STYL...
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