FLM0910-15F

FLM0910-15F X-Band Internally Matched FET FEATURES E High Output Power: P1dB=42.0dBm(Typ.) E High Gain: G1dB=7.5dB(Typ.) E High PAE: ηadd=32%(Typ.) E Broad Band: 9.5~10.5GHz E Impedance Matched Zin/Zout = 50Ω Hermetically Ε Sealed Package DESCRIPTION The FLM0910-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Ite m Drain-Source Voltage Gate-Source Voltage Total Pow e r Dissipation Storage Temperature Channe l Te m perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 57.7 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C) Ite m DC Input Voltage Forw ard Gate Current Reverse Gate Current Symbol V DS IGF IGR Condition RG=50 ohm RG=50 ohm Lim it 10 … 16.7 … † -3.62 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Ite m Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Pow e r at 1dB G.C.P. Pow e r Gain at 1dB G.C.P. Drain Current Pow e r -added Efficiency Gain Flatne s s Therm al Re s istance Channe l Te m perature Rise CASE STYLE : IB ESD Clas s III 2000V @ ~ Symbol IDSS gm Vp V GSO P1dB G1dB Idsr Nadd ∆G Rth ∆ Tch Condition V DS=5V , V GS=0V V DS=5V , IDS=3.5A V DS=5V , IDS=300mA IGS=-300uA V DS=10V IDS=0.5IDSS (typ.) f= 9.5 ~ 10.5 GHz Zs=Z L=50 ohm Channel to Case 10V x Idsr X Rth M in. -0.5 -5.0 41.0 6.5 Lim it Typ. 7.2 4500 -1.5...