FLM0910-25F

FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 93.7 -65 to +175 175 Unit V V W ℃ ℃ Recommended Operating Condition(Case Temperature Tc=25℃) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=25Ω RG=25Ω Condition Limit ≦10 ≦64 ≧-11.2 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ΔG Rth ΔTch Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=6.92A VDS=5V , IDS=500mA IGS=-500uA VDS=10V f=9.5 - 10.5 GHz IDS=0.6Idss Zs=ZL=50Ω Min. -0.5 -5.0 43 6.0 - Limit Typ. 10.8 10000 -1.5 44 7.0 6.5 30 1.4 - Max. 16.2 -3.0 7.2 ±0.6 1.6 100 Unit A mS V V dBm dB A % dB ℃/W ℃ Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise Channel to Case 10V X Idsr X Rth CASE STYLE: IK ESD Class Ⅲ...