DatasheetsPDF.com

FLM1011-3F Dataheets PDF



Part Number FLM1011-3F
Manufacturers SUMITOMO
Logo SUMITOMO
Description X / Ku-Band Internally Matched FET
Datasheet FLM1011-3F DatasheetFLM1011-3F Datasheet (PDF)

FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the hig.

  FLM1011-3F   FLM1011-3F


Document
FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-3F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25.0 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 11.7GHz, ∆f = 10MHz 2-Tone Test Pout = 24.0dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 10.7 ~ 11.7 GHz, ZS = ZL = 50Ω Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 900mA VDS = 5V, IDS = 70mA IGS = -70µA Min. -0.5 -5.0 34.0 6.5 -44 Limit Typ. Max. 1400 1300 -1.5 35.0 7.5 900 29 -46 5.0 2100 -3.0 1100 ±0.6 6.0 66 Unit mA mS V V dBm dB mA % dB dBc °C/W °C G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.4 August 2004 1 FLM1011-3F X, Ku-Band Internally Matched FET POWER DERATING CURVE 30 OUTPUT POWER & IM3 vs. INPUT POWER 31 29 27 25 23 IM3 Total Power Dissipation (W) 24 Output Power (S.C.L.) (dBm) VDS=10V f1 = 11.7 GHz f2 = 11.71 GHz 2-tone test Pout -15 -25 -35 -45 -55 18 12 6 21 0 50 100 150 200 19 Case Temperature (°C) 12 14 16 18 20 22 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER 37 36 VDS=10V P1dB Output Power (dBm) Pin=28dBm 26dBm 36 34 VDS=10V f = 11.2 GHz Output Power (dBm) 35 34 33 32 31 30 10.7 10.95 11.2 11.45 Pout 32 30 28 26 40 30 20 10 24dBm ηadd 22dBm 11.7 19 21 23 25 27 29 Frequency (GHz) Input Power (dBm) 2 ηadd (%) IM3 (dBc) FLM1011-3F X, Ku-Band Internally Matched FET +j50 +j100 +j25 10.7 10.5 GHz 10.9 11.3 11.1 10.9 11.5 11.1 11.7 11.9 11.3 11.9 11.7 11.5 11.3 11.5 11.9 11.7 11.1 11.3 11.1 10.9 10.7 10.9 10.7 10.5 GHz +j10 +j250 0.1 11.9 SCALE FOR |S12| S11 S22 +90° 0.2 S21 S12 0 10 10.7 20 50Ω 11.5 250 180° SCALE FOR |S21| 1 2 3 4 10.5 GHz 11.7 0° 10.5 GHz -j10 -j250 -j25 -j50 -j100 -90° FREQUENCY (MHZ) 10500 10600 10700 10800 10900 11000 11100 11200 11300 11400 11500 11600 11700 11800 11900 S11 MAG .606 .586 .556 .532 .493 .457 .413 .375 .333 .301 .291 .297 .320 .354 .399 ANG 127.5 118.0 107.5 96.4 84.3 71.3 55.9 38.7 19.7 -3.4 -28.4 -51.8 -74.6 -93.8 -109.4 S-PARAMETERS VDS = 10V, IDS = 900mA S21 S12 MAG ANG MAG ANG 2.381 2.475 2.574 2.663 2.767 2.859 2.929 2.984 2.995 2.992 2.935 2.861 2.776 2.681 2.565 -45.7 -54.3 -63.8 -73.4 -83.3 -94.1 -105.0 -116.4 -127.8 -139.6 -151.4 -162.7 -173.8 175.3 164.8 .045 .047 .050 .053 .058 .064 .070 .075 .081 .086 .089 .093 .096 .097 .099 -34.6 -47.4 -64.6 -76.4 -98.2 -110.4 -126.2 -137.1 -151.9 -164.5 -177.0 171.1 157.2 147.3 134.2 S22 MAG .500 .491 .474 .466 .452 .442 .430 .424 .411 .394 .375 .361 .341 .320 .305 ANG -144.6 -154.2 -165.0 -175.9 172.4 159.8 146.9 133.6 120.4 106.6 92.5 79.1 65.6 50.6 37.7 3 FLM1011-3F X, Ku-Band Internally Matched FET Case Style "IA" Metal-Ceramic Hermetic Package 1.5 Min. (0.059) 1 2-R 1.25±0.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.8±0.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.7±0.15 (0.382) 13.0±0.15 (0.512) 16.5±0.15 (0.650) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Obs.


FLM0910-25F FLM1011-3F FLM1011-4F


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)