FLM1213-6F

FLM1213-6F FEATURES High Output Power: P1dB=37.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=27%(Typ.) Low IM3 =-46dBc(Typ.) @Po=26.5dBm Broad Band: 12.7 to 13.2GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package X,Ku-Band Internally Matched FET DESCRIPTION The FLM1213-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 31.2 -65 to +175 175 Unit V V W deg.C deg.C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR Condition RG=100 ohm RG=100 ohm Lim it ≤10 ≤26.0 ≥-2.8 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P. Pow er Gain at 1dB G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IA Sym bol IDSS gm Vp V GSO P1dB G1dB Idsr Nadd ∆G IM3 Rth ∆Tch Condition V DS=5V , V GS=0V V DS=5V , IDS=1800mA V DS=5V , IDS=120mA IGS=-120uA V DS=10V IDSDC=0.60 IDSS (typ.) f= 12.7 to 13.2 GHz Zs=ZL=50 ohm f=13.2 GHz ∆f=10MHz ，2-tone Test P...