FLM1213-8F

FLM1213-8F X, Ku-Band Internally Matched FET FEATURES High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1213-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 42.8 -65 to +175 175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 13.2GHz, ∆f = 10MHz 2-Tone Test Pout = 28.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 12.7 ~ 13.2 GHz IDS = 0.65 IDSS(Typ.) ZS = ZL = 50Ω Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2200mA VDS = 5V, IDS =170mA IGS = -170µA Min. -0.5 -5.0 38.5 5.5 -44 Limit ...