FLM1314-12F

FLM1314-12F X, Ku-Band Internally Matched FET FEATURES High Output Power: P1dB = 41.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1314-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 75 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 48.0 and -6.6 mA respectively with gate resistance of 50Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 14.5GHz, ∆f = 10 MHz 2-Tone Test Pout = 29.0dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.6...