PBSS5330X

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 28 2004 Nov 03 Philips Semiconductors Product specification 30 V, 3 A PNP low VCEsat (BISS) transistor FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements. APPLICATIONS Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER PBSS5330X MAX. −30 −3 −5 107 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. 3 2 1 1 sym079 MARKING TYPE NUMBER PBSS5330X Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5330X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 MARKING CODE(1) *1S Fig.1 Simplified outline (SOT89) and symbol. 2004 Nov 03 2 Philips Semiconductors Product specificati...