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PBSS5360Z Dataheets PDF



Part Number PBSS5360Z
Manufacturers NXP
Logo NXP
Description PNP transistor
Datasheet PBSS5360Z DatasheetPBSS5360Z Datasheet (PDF)

PBSS5360Z 19 February 2014 SO T2 23 60 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360Z. 2. Features and benefits • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Appli.

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PBSS5360Z 19 February 2014 SO T2 23 60 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360Z. 2. Features and benefits • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • • DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance tp ≤ 1 ms; single pulse IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Conditions open base Min Typ Max -60 -3 -6 225 Unit V A A mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description B C E C base collector emitter collector 1 2 3 Simplified outline 4 Graphic symbol 2, 4 1 3 sym028 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Package Name PBSS5360Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number 7. Marking Table 4. Marking codes Marking code P5360Z Type number PBSS5360Z 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation tp ≤ 1 ms; single pulse [1] [2] [3] PBSS5360Z All information provided in this document is subject to legal disclaimers. Conditions open emitter open base open collector Min - Max -80 -60 -7 -3 -6 -500 -1 0.65 1 1.35 Unit V V V A A mA A W W W tp ≤ 1 ms; single pulse - © NXP N.V. 2014. All rights reserved Product data sheet 19 February 2014 2 / 14 NXP Semiconductors PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor Symbol Tj Tamb Tstg Parameter junction temperature ambient temperature storage temperature [1] [2] [3] [4] Conditions [4] Min -55 -65 Max 2 150 150 150 Unit W °C °C °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 2 Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated, mounting pad for collector 6 cm . 1.5 (1) 006aac674 2 Ptot (W) 1.0 (2) (3) 0.5 0.0 -75 -25 2 2 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig. 1. Power derating curves PBSS5360Z All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved Product data sheet 19 February 2014 3 / 14 NXP Semiconductors PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point [1] [2] [3] 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.1 0.02 1 0.5 0.2 0.05 0.01 Conditions in free air [1] [2] [3] Min - Typ - Max 192 125 93 16 Unit K/W K/W K/W K/W Rth(j-sp) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . aaa-010994 2 2 10 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, tin-plated and standard footprint. Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5360Z All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved Product data sheet 19 February 2014 4 / 14 NXP Semiconductors PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 aaa-010995 duty cycle = 1 0.75 0.33 0.5 0.2 0.05 0.01 10 0.1 0.02 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 2 10 102 tp (s) 103 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Fig. 3. Transient thermal impedance from junction to ambient as a function of pul.


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