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QM3016D Dataheets PDF



Part Number QM3016D
Manufacturers UBIQ
Logo UBIQ
Description N-Ch 30V Fast Switching MOSFETs
Datasheet QM3016D DatasheetQM3016D Datasheet (PDF)

QM3016D N-Ch 30V Fast Switching MOSFETs General Description The QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Gu.

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QM3016D N-Ch 30V Fast Switching MOSFETs General Description The QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V Applications RDSON 4mΩ ID 96A z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch TO252 Pin Configuration D Absolute Maximum Ratings S G Rating Parameter Drain-Source Voltage Gate-Source Voltage 10s Steady State 30 ±20 1 1 1 1 Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Units V V A A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Avalanche Current Total Power Dissipation Total Power Dissipation 4 4 2 3 96 68 30 25 192 317 53.8 62.5 6 -55 to 175 -55 to 175 2.42 19 16 A A A mJ A W W ℃ ℃ Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case 1 Typ. ------- Max. 62 25 2.4 Unit ℃/W ℃/W ℃/W Rev A.01 D021011 1 QM3016D N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=4.5V , ID=15A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=15A Min. 30 ------1.0 --------------------VDD=15V , VGS=10V , RG=3.3Ω ID=15A --------VDS=15V , VGS=0V , f=1MHz ----Typ. --0.0213 3.4 5.2 1.5 -5.73 ------26.5 1.4 31.6 8.6 11.7 9 19 58 15.2 3075 400 315 Max. ----4 6 2.5 --1 5 ±100 --2.8 --------------4000 530 --pF ns nC Unit V V/℃ mΩ V mV/℃ uA nA S Ω △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) IDSS IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Guaranteed Avalanche Characteristics Symbol EAS Parameter Single Pulse Avalanche Energy 5 Conditions VDD=25V , L=0.1mH , IAS=30A Min. 98 Typ. --- Max. --- Unit mJ Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current2,6 Diode Forward Voltage 2 1,6 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , TJ=25℃ Min. ----------- Typ. ------18 8 Max. 96 192 1 ----- Unit A A V nS nC Reverse Recovery Time Reverse Recovery Charge Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 QM3016D Typical Characteristics 210 180 N-Ch 30V Fast Switching MOSFETs 5.0 ID=12A VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 3.5 4.5 ID Drain Current (A) 150 120 90 60 30 0 0 0.3 VDS , Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 RDSON (mΩ) 4.0 3.0 2 4 VGS (V) 6 8 10 Fig.1 Typical Output Characteristics 12 10 Fig.2 On-Resistance vs. G-S Voltage ID=15A 8 VGS Gate to Source Voltage (V) 10 8 IS Source Current(A) 6 6 TJ=175℃ 4 TJ=25℃ 4 2 2 0 0 0 0 20 VSD , Source-to-Drain Voltage (V) 0.3 0.6 0.9 1.2 QG , Total Gate Charge (nC) 40 60 80 Fig.3 Forward Characteristics of Reverse 1.5 2.0 Fig.4 Gate-Charge Characteristics 1 0.5 0 -50 Normalized On Resistance Normalized VGS(th) 1.5 1.0 0.5 TJ ,Junction Temperature (℃ ) 25 100 175 -50 25 100 175 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 QM3016D N-Ch 30V Fast Switching MOSFETs 10000 F=1.0MHz Ciss 1000.00 100.00 10us 100us Capacitance (pF) 1000 Crss 100 ID (A) Coss 10.00 10ms 100ms DC 1.00 0.10 TC=25℃ Single Pulse 10 1 5 0.01 VDS Drain to Source Voltage(V) 9 13 17 21 2.


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