Document
QM3016D
N-Ch 30V Fast Switching MOSFETs
General Description The QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016D meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 30V
Applications
RDSON 4mΩ
ID 96A
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch
TO252 Pin Configuration
D
Absolute Maximum Ratings
S G
Rating Parameter Drain-Source Voltage Gate-Source Voltage 10s Steady State 30 ±20
1 1 1 1
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ
Units V V A A
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Avalanche Current Total Power Dissipation Total Power Dissipation
4 4 2 3
96 68 30 25 192 317 53.8 62.5 6 -55 to 175 -55 to 175 2.42 19 16
A A A mJ A W W ℃ ℃
Single Pulse Avalanche Energy
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case
1
Typ. -------
Max. 62 25 2.4
Unit ℃/W ℃/W ℃/W
Rev A.01 D021011
1
QM3016D
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=4.5V , ID=15A VGS=VDS , ID =250uA VDS=24V , VGS=0V , TJ=25℃ VDS=24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=15A Min. 30 ------1.0 --------------------VDD=15V , VGS=10V , RG=3.3Ω ID=15A --------VDS=15V , VGS=0V , f=1MHz ----Typ. --0.0213 3.4 5.2 1.5 -5.73 ------26.5 1.4 31.6 8.6 11.7 9 19 58 15.2 3075 400 315 Max. ----4 6 2.5 --1 5 ±100 --2.8 --------------4000 530 --pF ns nC Unit V V/℃ mΩ V mV/℃ uA nA S Ω
△BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) △VGS(th) IDSS IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS(th) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol EAS Parameter Single Pulse Avalanche Energy
5
Conditions VDD=25V , L=0.1mH , IAS=30A
Min. 98
Typ. ---
Max. ---
Unit mJ
Diode Characteristics
Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current Pulsed Source Current2,6 Diode Forward Voltage
2 1,6
Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , TJ=25℃
Min. -----------
Typ. ------18 8
Max. 96 192 1 -----
Unit A A V nS nC
Reverse Recovery Time Reverse Recovery Charge
Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4.The power dissipation is limited by 175℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
QM3016D
Typical Characteristics
210 180
N-Ch 30V Fast Switching MOSFETs
5.0
ID=12A
VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V
3.5 4.5
ID Drain Current (A)
150 120 90 60 30 0 0 0.3
VDS , Drain-to-Source Voltage (V)
0.6
0.9
1.2
1.5
RDSON (mΩ)
4.0
3.0 2 4
VGS (V)
6
8
10
Fig.1 Typical Output Characteristics
12
10
Fig.2 On-Resistance vs. G-S Voltage
ID=15A
8
VGS Gate to Source Voltage (V)
10
8
IS Source Current(A)
6
6
TJ=175℃
4
TJ=25℃
4
2
2
0 0
0 0 20
VSD , Source-to-Drain Voltage (V)
0.3
0.6
0.9
1.2
QG , Total Gate Charge (nC)
40
60
80
Fig.3 Forward Characteristics of Reverse
1.5 2.0
Fig.4 Gate-Charge Characteristics
1
0.5
0 -50
Normalized On Resistance
Normalized VGS(th)
1.5
1.0
0.5
TJ ,Junction Temperature (℃ )
25
100
175
-50
25
100
175
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
QM3016D
N-Ch 30V Fast Switching MOSFETs
10000
F=1.0MHz Ciss
1000.00
100.00
10us 100us
Capacitance (pF)
1000
Crss
100
ID (A)
Coss
10.00
10ms 100ms DC
1.00
0.10
TC=25℃ Single Pulse
10 1 5 0.01
VDS Drain to Source Voltage(V)
9
13
17
21
2.