2SK2570

2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) 2.5 V gate drive devices. Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Marking is “ZL–” Rev.2.00 Sep 07, 2005 page 1 of 6 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID ID(pulse)*1 Pch Tch Tstg Ratings 20 ±10 0.2 0.4 150 150 –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Notes: 2. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 20 ±10 — — 0.5 — — 0.22 — — — — — — — Typ — — — — — 0.8 1.3 0.35 45 33 9.6 20 60 240 140 Max — — 1.0 ±5.0 1.5 1.1 2.2 — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns Test Conditions ID = 10 µA, VGS = 0 IG = ±100 µ...