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AM1030N Dataheets PDF



Part Number AM1030N
Manufacturers AXElite
Logo AXElite
Description 100V N-Channel MOSFET
Datasheet AM1030N DatasheetAM1030N Datasheet (PDF)

AM1030N 100V N-Channel MOSFET ™ GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. .

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AM1030N 100V N-Channel MOSFET ™ GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. ™ FEATURES 3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability ™ PIN ASSIGNMENT The package of AM1030N is€ SOT-223; the pin assignment is given by: VÛmw`R•y Ñb ww w ot f o g . ec o h.c m 1/8 Axelite Confidential Materials, do not copy or distribute without written consent. AM1030N ™ ORDER/MARKING INFORMATION Order Information Top Marking Logo AM1030N X X Package Type E: SOT223-3L Packing A : Taping AM 1 0 3 0 N Y WW X Part number ID code:internal WW:01~52 Year: A=2010 1=2011 ™ ABSOLUTE MAXIMUM RATINGS Characteristics Drain-Source Voltage Drain Current Continuous (TC = 25°C) Continuous (TC = 70°C) Drain Current – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt `R•y (Note Ñb€ 3) Power Dissipation (TC = 25°C) Derate above 25°C Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Rating 100 3.0 2.36 6.8 ±25 50 3.0 0.2 6.0 2.0 0.016 -55 to +150 300 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C °C/W VÛmw w Operating and Storage w Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Resistance, Junction-to-Ambient (Note 4) gofo . w h tec .c om PD TJ, TSTG TL RθJA Note1: Pulse width limited by max. junction temperature Note2: Package limitation current is 75A Note3: Surface mounted on 1 in2 copper pad of FR4 board Note4: When mounted on the minimum pad size recommended (PCB Mount) 2/8 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.2 Jan.25, 2011 AM1030N ™ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Units Off Characteristics BVDSS VGS = 0 V, ID = 250 μA 100 V Drain-Source Breakdown Voltage Breakdown Voltage Temperature ΔBVDSS ID = 250 μA, - 0.1 - V/°C Coefficient / ΔTJ Referenced to 25°C VDS = 100 V, VGS = 0 V - - 1 μA IDSS VDS = 80 V, Zero Gate Voltage Drain Current - - 10 μA TC = 125°C IGSSF VGS = 25 V, VDS = 0 V - - 100 nA Gate-Body Leakage Current, Forward IGSSR VGS = -25 V, VDS = 0 V - - -100 nA Gate-Body Leakage Current, Reverse On Characteristics VGS(th) VDS = VGS, ID = 250 μA 1 - 2.5 V Gate Threshold Voltage RDS(on) VGS = 10 V, ID = 0.85 A - 0.13 0.19 Ω Static Drain-Source On-Resistance VDS = 40 V, ID = 0.85 A gFS - 1.85 S Forward Transconductance (Note 4) Dynamic Characterist.


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