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AM3406 Dataheets PDF



Part Number AM3406
Manufacturers AXElite
Logo AXElite
Description N-Channel Enhancement Mode MOSFET
Datasheet AM3406 DatasheetAM3406 Datasheet (PDF)

AM3406 N-Channel Enhancement Mode MOSFET Features • 30V/3.5A , RDS(ON)=42mΩ(typ.) @ VGS=10V RDS(ON)=70m Ω(typ.) @ VGS=5V Pin Description Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT-23 D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S G N-Channel MOSFET VÛmw`R•yÑb€ Ordering and Marking Information w.goftech.com AM3406 Package R : SOT23-3L Packing P.

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AM3406 N-Channel Enhancement Mode MOSFET Features • 30V/3.5A , RDS(ON)=42mΩ(typ.) @ VGS=10V RDS(ON)=70m Ω(typ.) @ VGS=5V Pin Description Top View D • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT-23 D Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S G N-Channel MOSFET VÛmw`R•yÑb€ Ordering and Marking Information w.goftech.com AM3406 Package R : SOT23-3L Packing Package Packing Blank : Tube A : Tapeing AM3406 : Note: B6XXX XXX - Date Code AXElite lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina- tion finish; which are fully compliant with RoHS. AXElite lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow teperature. AXElite defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 1 AM3406 Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation (TA = 25°C unless otherwise noted) Rating 30 ±20 VGS=10V 3.5 14 1.3 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 Unit V A A °C W °C/W Parameter Thermal Resistance-Junction to Ambient 2 Note : *Surface Mounted on 1in pad area, t ≤ 10sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) AM3406 Min. Typ. Max. Test Conditions Unit STATIC CHARACTERISTICS VÛmw`R•yÑb€ BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Qg Qgs Qgd a a Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current w.goftech.com VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=3.5A VGS=5V, IDS=2.8A ISD=1.25A, VGS=0V 30 1 - 1.5 42 70 0.8 1 30 2 ±100 65 90 1.3 V µA V nA mΩ V Gate Threshold Voltage Gate Leakage Current Drain-Source On-State Resistance Diode Forward Voltage b GATE CHARGE CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=15V, VGS=10V, IDS=3.5A - 12.5 2.4 1.3 16 nC 2 Axelite Confidential Materials, do not copy or distribute without written consent. Rev. 1.0 Sep.06, 2010 AM3406 Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C unless otherwise noted) AM3406 Min. Typ. Max. Test Conditions Unit DYNAMIC CHARACTERISTICS RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance Input Capacitance Output Capacitance VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω - 1.5 400 80 45 10 8 19 6.2 19 15 35 12 Ω pF Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ns Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. VÛmw`R•yÑb€ w.goftech.com 3 Axelite Confidential Materials, do not copy or distribute without written consent. Rev. 1.0 Sep.06, 2010 AM3406 Typical Operating Characteristics Power Dissipation 1.0 0.9 0.8 Drain Current 4.0 3.5 3.0 ID - Drain Current (A) 0.7 Ptot - Power (W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o 2.5 2.0 1.5 1.0 0.5 0.0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area 50 VÛmw`R•yÑb€ Thermal Transient Impedance 2 Normalized Transient Thermal Resistance 1 Duty = 0.5 0.2 0.1 ID - Drain Current (A) Rd s(o n) Lim it 10 w.goftech.com 300µs 1ms 0.1 0.05 0.02 0.01 1 10ms 0.1 100ms 0.01 Single Pulse 1s DC 0.01 0.01 TA=25 C 0.1 1 10 100 o 1E-3 1E-4 Mounted on 1in pad o RθJA : 150 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4 Axelite Confidential Materials, do not copy or distribute without written consent. Rev. 1.0 Sep.06, 2010 AM3406 Typical Operating Characteristics (Cont.) Output Characteristics 14 12 10 VGS= 5, 6, 7, 8, 9, 10V 100 120 Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ ) ID - Drain Current (A) 80 VGS=5V 8 6 4 2 3V 0 60 VGS=10V 40 4V 20 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 14 VÛmw`R•yÑb€ Gate Threshold Voltage 1.6 1.4 IDS=250µΑ 12 Normalized Threshold Voltage TJ=-55 C o 10 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 ID - Drain Current (A) w.goftech.com 8 6 4 2 0 TJ=125 C TJ=25 C o o 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C) 5 Axelite Confidential Materials, do not copy or distribute without written consent. Rev. 1.0 Sep.06, 2010 AM3406 Typical Operating Characte.


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