Document
AM3406
N-Channel Enhancement Mode MOSFET
Features
•
30V/3.5A , RDS(ON)=42mΩ(typ.) @ VGS=10V RDS(ON)=70m Ω(typ.) @ VGS=5V
Pin Description
Top View
D
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
G S
SOT-23
D
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
S G
N-Channel MOSFET
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Ordering and Marking Information
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AM3406
Package R : SOT23-3L Packing Package Packing Blank : Tube A : Tapeing
AM3406 :
Note:
B6XXX
XXX - Date Code
AXElite lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS.
AXElite lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow teperature. AXElite defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
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AM3406
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation
(TA = 25°C unless otherwise noted)
Rating 30 ±20 VGS=10V 3.5 14 1.3 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 Unit V A A °C W °C/W
Parameter
Thermal Resistance-Junction to Ambient
2
Note : *Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics
Symbol Parameter
(TA = 25°C unless otherwise noted) AM3406 Min. Typ. Max.
Test Conditions
Unit
STATIC CHARACTERISTICS
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BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Qg Qgs Qgd
a a
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
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VGS=0V, IDS=250µA VDS=24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=3.5A VGS=5V, IDS=2.8A ISD=1.25A, VGS=0V
30 1 -
1.5 42 70 0.8
1 30 2 ±100 65 90 1.3
V µA V nA mΩ V
Gate Threshold Voltage Gate Leakage Current Drain-Source On-State Resistance Diode Forward Voltage
b
GATE CHARGE CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS=15V, VGS=10V, IDS=3.5A -
12.5 2.4 1.3
16 nC
2
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010
AM3406
Electrical Characteristics (Cont.)
Symbol Parameter
b
(TA = 25°C unless otherwise noted) AM3406 Min. Typ. Max.
Test Conditions
Unit
DYNAMIC CHARACTERISTICS RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Gate Resistance Input Capacitance Output Capacitance
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
-
1.5 400 80 45 10 8 19 6.2
19 15 35 12
Ω pF
Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
ns
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing.
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Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010
AM3406
Typical Operating Characteristics
Power Dissipation
1.0 0.9 0.8
Drain Current
4.0 3.5 3.0
ID - Drain Current (A)
0.7
Ptot - Power (W)
0.6 0.5 0.4 0.3 0.2 0.1 0.0 TA=25 C 0 20 40 60 80 100 120 140 160
o
2.5 2.0 1.5 1.0 0.5 0.0 TA=25 C,VG=10V 0 20 40 60 80 100 120 140 160
o
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
50
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Thermal Transient Impedance
2
Normalized Transient Thermal Resistance
1
Duty = 0.5 0.2 0.1
ID - Drain Current (A)
Rd s(o n) Lim it
10
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300µs 1ms
0.1
0.05 0.02 0.01
1
10ms
0.1
100ms
0.01
Single Pulse
1s DC
0.01 0.01
TA=25 C 0.1 1 10 100
o
1E-3 1E-4
Mounted on 1in pad o RθJA : 150 C/W
2
1E-3
0.01
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
4
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010
AM3406
Typical Operating Characteristics (Cont.)
Output Characteristics
14 12 10 VGS= 5, 6, 7, 8, 9, 10V
100 120
Drain-Source On Resistance
RDS(ON) - On - Resistance (mΩ )
ID - Drain Current (A)
80
VGS=5V
8 6 4 2 3V 0
60 VGS=10V 40
4V
20
0
0
1
2
3
4
5
0
2
4
6
8
10
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
14
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Gate Threshold Voltage
1.6 1.4 IDS=250µΑ
12
Normalized Threshold Voltage
TJ=-55 C
o
10
1.2 1.0 0.8 0.6 0.4 0.2 -50 -25
ID - Drain Current (A)
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8 6 4 2 0
TJ=125 C TJ=25 C
o
o
0
1
2
3
4
5
6
7
0
25
50
75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev. 1.0 Sep.06, 2010
AM3406
Typical Operating Characte.