MT29F16G08DAAWP

Micron Confidential and Proprietary Advance‡ 8, 16, 32, 64Gb NAND Flash Memory Features NAND Flash Memory MT29F8G08AAAWP, MT29F16G08DAAWP, MT29F32G08FAAWP, MT29F8G08AAAC4, MT29F16G08EAAC4, MT29F32G08GAAC4, MT29F8G08AAAC6, MT29F16G08EAAC6, MT29F32G08GAAC6, MT29F64G08KAAC6 Features Open NAND Flash Interface (ONFI) 1.0 compliant Single-level cell (SLC) technology Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes) – Block size: 64 pages (256K + 13K bytes) – Plane size: 2,048 blocks – Device size: 8Gb: 4,096 blocks; 16Gb: 8,192 blocks; 32Gb: 16,384 blocks; 64Gb: 32,768 blocks READ performance – Random READ: 25µs – Sequential READ: 20ns WRITE performance – PROGRAM PAGE: 250µs (TYP) – BLOCK ERASE: 1.5ms (TYP) Endurance – 100,000 PROGRAM/ERASE cycles (1-bit ECC1) Data retention: 10 years First block (block address 00h) guaranteed to be valid when shipped from factory1 Industry-standard basic NAND Flash command set Advanced command set – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – Two-plane commands – Interleaved die operations – READ UNIQUE ID (contact factory) Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion WP# signal: entire device hardware write protect RESET required after power-up INTERNAL DATA MOVE operations su...