DatasheetsPDF.com

MT29F16G08DAAWP Dataheets PDF



Part Number MT29F16G08DAAWP
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F16G08DAAWP DatasheetMT29F16G08DAAWP Datasheet (PDF)

Micron Confidential and Proprietary Advance‡ 8, 16, 32, 64Gb NAND Flash Memory Features NAND Flash Memory MT29F8G08AAAWP, MT29F16G08DAAWP, MT29F32G08FAAWP, MT29F8G08AAAC4, MT29F16G08EAAC4, MT29F32G08GAAC4, MT29F8G08AAAC6, MT29F16G08EAAC6, MT29F32G08GAAC6, MT29F64G08KAAC6 Features • Open NAND Flash Interface (ONFI) 1.0 compliant • Single-level cell (SLC) technology • Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes) – Block size: 64 pages (256K + 13K bytes) – Plane size: 2,048 bloc.

  MT29F16G08DAAWP   MT29F16G08DAAWP



Document
Micron Confidential and Proprietary Advance‡ 8, 16, 32, 64Gb NAND Flash Memory Features NAND Flash Memory MT29F8G08AAAWP, MT29F16G08DAAWP, MT29F32G08FAAWP, MT29F8G08AAAC4, MT29F16G08EAAC4, MT29F32G08GAAC4, MT29F8G08AAAC6, MT29F16G08EAAC6, MT29F32G08GAAC6, MT29F64G08KAAC6 Features • Open NAND Flash Interface (ONFI) 1.0 compliant • Single-level cell (SLC) technology • Organization – Page size: x8: 4,314 bytes (4,096 + 218 bytes) – Block size: 64 pages (256K + 13K bytes) – Plane size: 2,048 blocks – Device size: 8Gb: 4,096 blocks; 16Gb: 8,192 blocks; 32Gb: 16,384 blocks; 64Gb: 32,768 blocks • READ performance – Random READ: 25µs – Sequential READ: 20ns • WRITE performance – PROGRAM PAGE: 250µs (TYP) – BLOCK ERASE: 1.5ms (TYP) • Endurance – 100,000 PROGRAM/ERASE cycles (1-bit ECC1) • Data retention: 10 years • First block (block address 00h) guaranteed to be valid when shipped from factory1 • Industry-standard basic NAND Flash command set • Advanced command set – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – One-time programmable (OTP) commands – Two-plane commands – Interleaved die operations – READ UNIQUE ID (contact factory) • Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status • Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle completion • WP# signal: entire device hardware write protect • RESET required after power-up • INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1: 48-Pin TSOP Type 1 Options • Density2 – 8Gb, 16Gb, 32Gb, 64Gb • Device width: x8 • Configuration: # of die # of CE# # of R/B# I/O TSOP/LGA 1 1 1 Common TSOP 2 2 2 Common TSOP 4 2 2 Common LGA 2 2 2 Separate LGA 4 2 2 Separate LGA 8 4 4 Separate • VCC: 2.7–3.6V • Package: – 48 TSOP type I (lead-free plating) – 52-pad LGA • Operating temperature: – Commercial temperature (0°C to 70°C) – Extended temperature (–40°C to +85°C) Notes: 1. For details, see “Error Management” on page 89. 2. For part numbering and markings, see Figure 2 on page 2. PDF: 09005aef82d68edc / Source: 09005aef82d68f88 8gb_nand_slc_m51a__1.fm -Rev. 1.9 5/08 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2007 Micron Technology, Inc. All rights reserved. ‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. Draft 5/19/2008 Micron Confidential and Proprietary Advance 8, 16, 32, 64Gb NAND Flash Memory Part Numbering Information Part Numbering Information Micron NAND Flash devices are available in several different configurations and densities (see Figure 2). Figure 2: Part Number Chart MT 29F 8G Micron Technology Product Family 29F = Single-supply NAND Flash memory 08 A A A WP ES :A Design Revision A = .


MT29F8G08AAAWP MT29F16G08DAAWP MT29F32G08FAAWP


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)