AO4478

AO4478 30V N-Channel MOSFET General Description The AO4478 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications. Product Summary VDS (V) = 30V ID = 9A (VGS = 10V) RDS(ON) <19mΩ (VGS = 10V) RDS(ON) <26mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom View D G S S S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current C Maximum 30 ±25 9.0 7.0 60 17 14 3.1 2.0 -55 to 150 Units V V VGS TA=25° C TA=70° C ID IDM Iar Ear PD TJ, TSTG Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mHC TA=25° C Power DissipationB TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Lead C A mJ W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4478 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10A IS=1A,VGS=0V C TJ=125° 1 60 16 25 21 24 0....