AP9971GH

AP9971GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 36mΩ 25A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9971GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +20 25 16 80 39 0.31 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.2 62.5 110 Unit ℃/W ℃/W ℃/W 1 200902243 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9971GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS...