AP9971GM-HF-3

Advanced Power Electronics Corp. AP9971GM-HF-3 Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free SO-8 package D1 D2 BVDSS R DS(ON) ID 60V 50mΩ 5A G1 G S1 G2 S2 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 D2 D1 G2 The AP9971GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited for use in low-voltage DC/DC conversion and general load-switching applications. SO-8 S1 S2 G1 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 3 3 Rating 60 ±25 5 3.2 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Pulsed Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit °C/W Ordering Information AP9971GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201007193-3 1/5 Advanced Power Electronics Corp. AP9971GM-HF-3 Electrical Characteristics at Tj = 25°C (unless otherwise specified) Symbol BVDSS Parameter ...