N-channel Enhancement-mode Power MOSFET
Advanced Power Electronics Corp.
AP60N03GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low...
Description
Advanced Power Electronics Corp.
AP60N03GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
30V 13.5mΩ 55A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP60N03GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
The AP60N03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required. G D S
D (tab)
TO-263 (S) D (tab)
G
D
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
S
TO-220 (P)
Rating 30 ±20 55 35 215 62.5 0.5 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.0 62 Units °C/W °C/W
Ordering Information
AP60N03GS-HF-3TR : in RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel) AP60N03GP-HF-3TB : in RoHS-c...
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