SKKT323-12E

SKKT 323/12 E Absolute Maximum Ratings Symbol Chip IT(AV) ITSM i2t sinus 180° 10 ms 10 ms Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C 320 241 9500 8200 451250 336200 1300 1200 1200 Tj = 130 °C Tj = 130 °C 130 1000 -40 ... 130 -40 ... 125 a.c.; 50 Hz; r.m.s. 1 min 1s 3000 3600 A A A A A²s A²s V V V A/µs V/µs °C °C V V Conditions Values Unit SEMIPACK® 3 Thyristor Modules SKKT 323/12 E Features Industrial standard package Electrically insulated base plate Heat transfer through aluminum oxide ceramic insulated metal base plate Chip soldered on direct copper bonded Al2O3 ceramic Thyristor with center gate UL recognition applied for file no. E63532 VRSM VRRM VDRM (di/dt)cr (dv/dt)cr Tj Module Tstg Visol Characteristics Symbol Chip VT VT(TO) rT IDD;IRD tgd tgr tq IH IL VGT IGT VGD IGD Rth(j-c) Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 410 chip module to heatsink M5 to heatsink M8 4.25 7.65 0.08 0.04 5.75 10.34 5 * 9,81 K/W K/W Nm Nm m/s² g Tj = 25 °C, IT = 750 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VDD = VDRM; VRD = VRRM Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs VD = 0.67 * VDRM Tj = 130 °C Tj = 25 °C Tj = 25 °C, RG = 33  Tj = 25 °C, d.c. Tj = 25 °C, d.c. Tj = 130 °C, d.c. Tj = 130 °C, d.c. cont. sin. 180° rec. 120° per chip per module per chip per module per chip per module 2 150 0.25 10 0.091 0.0455 0.095 0.048 0.11 0.055 1 2 150 150 300 500 2000 1.45 0.81 0.85 100 V V m mA µs µs µs mA mA V mA V mA K/W K/W K/W K/W K/W K/W Conditions min...