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MDF9N50 Dataheets PDF



Part Number MDF9N50
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF9N50 DatasheetMDF9N50 Datasheet (PDF)

MDF9N50 N-channel MOSFET 500V MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 9.0  RDS(ON) ≤ 0.85Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  HID  Lighting G DS Absolute Maximum Ratings (Ta = 25oC.

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MDF9N50 N-channel MOSFET 500V MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 9.0  RDS(ON) ≤ 0.85Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  HID  Lighting G DS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 9.0 5.5 36 38 0.3 4.5 300 -55~150 Unit V V A A A W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.5 3.3 Unit oC/W Jan. 2021. Version 1.3 1 Magnachip Semiconductor Ltd. MDF9N50 N-channel MOSFET 500V Ordering Information Part Number MDF9N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A VDS = 400V, ID = 9.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25Ω(3) IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/μs(3) Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=5.1mH, IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C Min Typ Max Unit 500 - 3.0 - V 5.0 - - 1 μA - - 100 nA 0.72 0.85 Ω - 7 - S - 19 - - 5.7 - nC - 7.6 - - 780 - 4.0 pF - 100 - 18 - 34 ns - 38 - 27 - 9.0 - A - 1.4 V - 272 ns - 2.0 μC Jan. 2021. Version 1.3 2 Magnachip Semiconductor Ltd. ID,Drain Current [A] MDF9N50 N-channel MOSFET 500V Vgs=5.5V =6.0V 10 =6.5V =7.0V =8.0V =10.0V 1 Notes 1. 250㎲ Pulse Test 2. TC=25℃ 0.1 0.1 1 10 VDS,Drain-Source Voltage [V] Fig.1 On-Region Characteristics 1.8 ※ Notes : 1.6 1. VGS = 10 V 2. ID = 5 A 1.4 1.2 1.0 VGS=10V V =4.5V GS 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature [oC] Fig.3 On-Resistance Variation with Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage DS(ON) R [Ω ] 1.3 1.2 1.1 1.0 0.9 VGS=10.0V VGS=20V 0.8 0.7 0.6 0 5 10 15 20 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage 1.2 ※ Notes : 1. V = 0 V GS 2. I = 250㎂ D 1.1 1.0 0.9 0.8 -50 0 50 100 150 200 TJ, Junction Temperature [oC] Fig.4 Breakdown Voltage Variation vs. Temperature RDS(ON), (Normalized) Drain-Source On-Resistance ID [A] * Notes ; 1. VDS=30V 10 150℃ 25℃ -55℃ 1 4 5 6 7 8 VGS [V] Fig.5 Transfer Characteristics IDR Reverse Drain Current [A] 100 ※ Notes : 1. VGS = 0 V 2. I = 250㎂ D 10 150℃ 25℃ 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature Jan. 2021. Version 1.3 3 Magnachip Semiconductor Ltd. VGS, Gate-Source Voltage [V] MDF9N50 N-channel MOSFET 500V 10 ※ Note : ID = 9.0A 8 100V 250V 400V 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 Q , Total Gate Charge [nC] G Fig.7 Gate Charge Characteristics 102 Operation in This Area is Limited by R DS(on) 101 100 10 s 100 s 1 ms 10 ms 100 ms DC 10-1 Single Pulse T =Max rated J TC=25℃ 10-2 10-1 100 101 102 VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Capacitance [pF] ID, Drain Current [A] 1400 Coss 1200 Ciss = Cgs + Cgd (Cds = shorted) C =C +C oss ds gd C =C rss gd 10.


FS1117 MDF9N50 MDF9N50TH


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