Document
MDF9N50 N-channel MOSFET 500V
MDF9N50
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDF9N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V ID = 9.0 RDS(ON) ≤ 0.85Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply HID Lighting
G DS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1)
Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
Dv/dt EAS TJ, Tstg
Rating 500 ±30 9.0 5.5 36 38 0.3 4.5 300
-55~150
Unit V V A A A
W W/ oC
V/ns mJ oC
Symbol RθJA RθJC
Rating 62.5 3.3
Unit oC/W
Jan. 2021. Version 1.3
1
Magnachip Semiconductor Ltd.
MDF9N50 N-channel MOSFET 500V
Ordering Information
Part Number MDF9N50TH
Temp. Range -55~150oC
Package TO-220F
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics
BVDSS VGS(th) IDSS IGSS RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source Diode Forward Current
IS
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Test Condition ID = 250μA, VGS = 0V VDS = VGS, ID = 250μA VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V VGS = 10V, ID = 4.5A VDS = 30V, ID = 4.5A
VDS = 400V, ID = 9.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 9.0A, RG = 25Ω(3)
IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/μs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=5.1mH, IAS=9.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
500
-
3.0
-
V
5.0
-
-
1
μA
-
-
100
nA
0.72
0.85
Ω
-
7
-
S
-
19
-
-
5.7
-
nC
-
7.6
-
-
780
-
4.0
pF
-
100
-
18
-
34
ns
-
38
-
27
-
9.0
-
A
-
1.4
V
-
272
ns
-
2.0
μC
Jan. 2021. Version 1.3
2
Magnachip Semiconductor Ltd.
ID,Drain Current [A]
MDF9N50 N-channel MOSFET 500V
Vgs=5.5V =6.0V
10
=6.5V
=7.0V
=8.0V
=10.0V
1
Notes 1. 250㎲ Pulse Test 2. TC=25℃
0.1
0.1
1
10
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. VGS = 10 V 2. ID = 5 A
1.4
1.2
1.0
VGS=10V V =4.5V
GS
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
DS(ON) R [Ω ]
1.3
1.2
1.1
1.0
0.9
VGS=10.0V
VGS=20V
0.8
0.7
0.6
0
5
10
15
20
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes : 1. V = 0 V
GS
2. I = 250㎂ D
1.1
1.0
0.9
0.8 -50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig.4 Breakdown Voltage Variation vs. Temperature
RDS(ON), (Normalized) Drain-Source On-Resistance
ID [A]
* Notes ; 1. VDS=30V
10
150℃ 25℃
-55℃
1
4
5
6
7
8
VGS [V]
Fig.5 Transfer Characteristics
IDR Reverse Drain Current [A]
100
※ Notes : 1. VGS = 0 V 2. I = 250㎂
D
10
150℃
25℃
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Jan. 2021. Version 1.3
3
Magnachip Semiconductor Ltd.
VGS, Gate-Source Voltage [V]
MDF9N50 N-channel MOSFET 500V
10
※ Note : ID = 9.0A
8
100V 250V
400V
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22
Q , Total Gate Charge [nC] G
Fig.7 Gate Charge Characteristics
102 Operation in This Area is Limited by R DS(on)
101
100
10 s 100 s 1 ms 10 ms
100 ms DC
10-1
Single Pulse
T =Max rated J
TC=25℃
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Capacitance [pF]
ID, Drain Current [A]
1400
Coss
1200
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
C =C
rss
gd
10.